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Vehicle-grade 80 V EPC2214 eGaN FET makes the lidar system see more clearly

EPC Power Conversion Corporation (EPC) announced that one more automotive gallium nitride (eGaN) device (80 V EPC2214) has successfully passed the AEC Q101 test certification, which can support a variety of new applications in automotive and other severe environments.

EPC Power Conversion Corporation (EPC) announced that one more automotive gallium nitride (eGaN) device (80 V EPC2214) has successfully passed the AEC Q101 test certification, which can support a variety of new applications in automotive and other severe environments.

Products based on gallium nitride (eGaN) technology have been in mass production for more than 9 years, and billions of hours of practical automotive application experience have been accumulated, including lidar and radar systems for fully autonomous vehicles, and 48 VC12 used in data center computers. Applications such as V DC/DC converters, ultra-high fidelity infotainment systems and high-intensity truck headlights. These new devices have passed the rigorous AEC Q101 test certification, and more discrete transistors and integrated circuits for the harsh automotive environment will be introduced later.

EPC2214 is an 80 V, 20 mΩ GaN field effect Transistor element, with an ultra-small footprint (1.8 square millimeters), and a pulse current of 47 A. It is very suitable for launching lasers in a lidar system because the FET triggers the laser signal, Generates large currents and extremely short pulse widths to achieve higher resolution, and larger pulse currents enable the lidar system to see farther scenes. These two characteristics, coupled with small size and low cost, make eGaN FETs not only supporting severe automotive lidar systems, but also ideal components for radar and ultrasonic sensors.

To pass the AEC Q101 certification test, EPC’s gallium nitride field effect transistor (eGaN FET) must pass various tests under severe environments and different bias conditions, including bias humidity test (H3TRB), high temperature reverse bias (HTRB), high temperature grid bias (HTGB), temperature cycling (TC) and many other different tests. It should be noted that the chip-scale packaging of EPC devices has also passed all the same test standards for traditionally packaged devices, proving that the chip-scale packaging has excellent performance while the device remains robust and highly reliable. These eGaN devices are produced in equipment that complies with the automotive quality management system standard IATF 16949.

Alex Lidow, CEO and co-founder of EPC, said: “This certified automotive-grade gallium nitride device is the latest device in our roadmap for automotive transistors and integrated circuits. It aims to fully support the creation of The future of self-driving cars, saving gasoline usage and improving driving safety. Compared with current automotive, increasingly aging silicon-based power MOSFETs, products based on eGaN technology have faster switching, smaller size, and higher efficiency. , Lower cost and more reliable.”

Price and availability

The unit price of EPC2214 at 2.5 Ku/reel is US$0.72.

Vehicle-grade 80 V EPC2214 eGaN FET makes the lidar system see more clearly

The Links:   LQ281L1LW14 LM046QB1S02