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Vishay Introduces New Common-Drain Dual N-Channel 60 V MOSFETs to Improve Power Density and Efficiency

MALVERN, Pa. — December 11, 2019 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced a new common-drain dual N-channel 60 V MOSFET in a small thermally enhanced PowerPAK 1212-8SCD package — SiSF20DN. The Vishay Siliconix SiSF20DN is the industry’s lowest RS-S(ON) 60 V common-drain device designed to improve power density and efficiency in battery management systems, in-line and wireless chargers, DC/DC converters, and power supplies.

The recently announced dual-chip MOSFET features as low as 10 mW typical RS-S(ON) at 10V, the lowest on-resistance 60V device in a 3mm x 3mm package, and 42.5% lower than the second-largest package size , which is 89% lower than Vishay’s previous-generation devices.

Thereby reducing the power channel voltage drop, reducing power consumption and improving efficiency. To increase power density, the RS1S2(ON) area product of the SiSF20DN is 46.6 % lower than the second-ranked alternative MOSFET, even including the larger 6 mm x 5 mm package solution.

To save PCB space, reduce component count, and simplify design, the device features an optimized package structure with two monolithically integrated TrenchFET Gen 4 n-channel MOSFETs in a common-drain configuration. The SiSF20DN source contacts are arranged side-by-side, increasing the connection to increase the PCB contact area and further reducing the resistivity compared to traditional dual-package devices. This design makes the MOSFET suitable for bidirectional switching in 24 V systems and industrial applications including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance and smoke alarms.

SiSF20DN is 100 % Rg and UIS tested, RoHS compliant and halogen free.

Samples and production quantities of the new MOSFETs are available now, with lead times of 30 weeks for bulk orders.

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